Singapore to invest S$800 million in semiconductor research and new power electronics centre

Singapore is set to invest S$800 million in semiconductor research and development to strengthen national capabilities in high-impact technological areas. This funding is part of the semiconductor flagship programme under the Research, Innovation and Enterprise 2030 (RIE2030) plan.

The initiative was highlighted by Senior Minister and RIE Council chair Lee Hsien Loong in December 2025.

It serves as a coordinated effort to streamline publicly funded semiconductor research across the Republic.

According to Minister-in-Charge of Energy, Science and Technology Dr Tan See Leng, the programme focuses on established strengths such as advanced packaging and photonics. Dr Tan announced the details during the ministry’s Committee of Supply debate on 2 March 2026.

The flagship programme aims to translate laboratory research into commercial products. This strategy is expected to encourage advanced manufacturing activities and create high-quality employment opportunities within the domestic market.

The semiconductor sector remains a vital pillar of the national economy. It currently contributes approximately 7 per cent to the total gross domestic product of Singapore.

Previous RIE investments have already proven successful in attracting global interest. Over the past four years, Singapore has anchored more than S$30 billion in investments from various semiconductor companies.

As part of this broader strategy, Singapore will invest an additional S$60 million to establish a new National Semiconductor Translation and Innovation Centre (NSTIC) for Power Electronics. This facility will focus on next-generation power capabilities.

The new centre builds upon existing NSTICs dedicated to gallium nitride, advanced photonics, and R&D fabrication. It is designed to bridge the gap between academic research and industrial application.

The NSTIC for Power Electronics will feature an open-innovation 8-inch silicon carbide (SiC) R&D pilot line. This infrastructure will support rapid prototyping and the seamless transfer of technology to full-scale manufacturing.

The facility will be accessible to both public and private sector users. It intends to forge strong partnerships between industry and academia to drive the commercialisation of wide bandgap semiconductor technologies.

The Agency for Science, Technology and Research (A*STAR) noted that traditional silicon is struggling to meet modern demands. High-voltage and high-thermal requirements are increasing in sectors like data centres and electric vehicles.

Wide bandgap materials such as SiC and gallium nitride offer superior performance. They provide higher voltage handling, faster switching speeds, and greater thermal resilience compared to conventional materials.

These advancements allow power systems to become more compact while significantly reducing energy waste. The NSTIC for Power Electronics is expected to commence its operations by April 2026.

Other centres in the network are already showing progress. The NSTIC for gallium nitride, launched in 2023 and opened in 2025, serves high-growth markets including 5G and 6G communications.

Furthermore, the NSTIC for Advanced Photonics has achieved breakthroughs in metalens fabrication and high-speed data transmission. This centre has already attracted more than 10 industry partners for collaborative projects.

In 2025, Deputy Prime Minister Gan Kim Yong announced further investment into an NSTIC for R&D Fab. This facility is currently on track to begin operations by 2027.

Dr Tan confirmed that private companies have already expressed strong interest in the collaboration space provided by the upcoming fabrication facility. These collective efforts ensure Singapore remains a key node in the global semiconductor value chain.